2N5953
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - JFETs
Description
IC FET N-CH TO-92
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 360mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 15V
Drain Current-Max (Abs) (ID) 0.005A
DS Breakdown Voltage-Min 30V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.36W
Feedback Cap-Max (Crss) 2 pF
Highest Frequency Band VERY HIGH FREQUENCY B
Current - Drain (Idss) @ Vds (Vgs=0) 2.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 100nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 375Ohm
Power Gain-Min (Gp) 5dB
Compliance
RoHS Status RoHS Compliant
Alternative Model
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