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STGY40NC60VD

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description STMICROELECTRONICS STGY40NC60VD IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, MAX-247, 3 Pins
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Buying Options
Total Price: USD $5.82
Unit Price: USD $5.8168
≥1 USD $5.8168
≥10 USD $4.60709
≥100 USD $3.94907
≥500 USD $3.510267
≥1000 USD $3.005666
≥3000 USD $2.83015
Inventory: 532
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 260W
Current Rating 50A
Base Part Number STGY40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 260W
Input Type Standard
Turn On Delay Time 43 ns
Transistor Application POWER CONTROL
Rise Time 19 ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 170 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 44ns
Continuous Drain Current (ID) 50A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 61 ns
Test Condition 390V, 40A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 247 ns
Gate Charge 214nC
Td (on/off) @ 25°C 43ns/140ns
Switching Energy 330μJ (on), 720μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V

Dimensions

Height 20.3mm
Length 15.9mm
Width 5.3mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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