Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 260W
Element Configuration Single
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 170 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 44ns
Continuous Drain Current (ID) 50A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Test Condition 390V, 40A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 247 ns
Td (on/off) @ 25°C 43ns/140ns
Switching Energy 330μJ (on), 720μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V