Gate-Emitter Voltage-Max 20V
Switching Energy 1.8mJ (on), 1mJ (off)
Td (on/off) @ 25°C 60ns/220ns
Current - Collector Pulsed (Icm) 240A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 80A
Test Condition 400V, 80A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.85V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 60 ns
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 469W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ