STGWT80H65FB
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
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Buying Options
Total Price: USD $5.32
Unit Price: USD $5.3152
≥1 USD $5.3152
≥10 USD $4.20904
Inventory: 149
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 5mm
Length 15.8mm
Height 20.1mm
Technical
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.1mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C 84ns/280ns
Current - Collector Pulsed (Icm) 240A
Gate Charge 414nC
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
Test Condition 400V, 80A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Power - Max 469W
Input Type Standard
Element Configuration Single
Base Part Number STGWT80
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 469W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Weight 6.756003g
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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