STGWS38IH130D
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.3KV 55A 3-Pin(3+Tab) TO-247 Tube
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 25V
Switching Energy 3.4mJ (off)
Td (on/off) @ 25°C -/284ns
Current - Collector Pulsed (Icm) 125A
Gate Charge 127nC
Turn Off Time-Nom (toff) 740 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Test Condition 960V, 20A, 10 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1300V
Collector Emitter Breakdown Voltage 1.3kV
Max Collector Current 55A
Collector Emitter Voltage (VCEO) 1.3kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 180W
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGW38
Max Power Dissipation 180W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Alternative Model
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