Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 310W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 145 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 90 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/145ns
Switching Energy 330μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V