Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 240W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.85V
Max Collector Current 80A
Reverse Recovery Time 84 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Operating Temperature -55°C~125°C TJ
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 25V
Switching Energy 3.7mJ (on), 5.7mJ (off)
Td (on/off) @ 25°C 48ns/338ns
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 564 ns
Vce(on) (Max) @ Vge, Ic 3.85V @ 15V, 30A
Test Condition 960V, 30A, 10 Ω, 15V