STGWA35HF60WDI
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 185μJ (off)
Td (on/off) @ 25°C 30ns/175ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 140nC
Turn Off Time-Nom (toff) 295 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 390V, 20A, 10 Ω, 15V
Turn On Time 45 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 85 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 260W
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGW35
Max Power Dissipation 260W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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