Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 25V
Switching Energy 2.4mJ (on), 4.3mJ (off)
Td (on/off) @ 25°C 36ns/251ns
Current - Collector Pulsed (Icm) 100A
Turn Off Time-Nom (toff) 756 ns
Vce(on) (Max) @ Vge, Ic 3.85V @ 15V, 20A
Test Condition 960V, 20A, 10 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 84 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3.85V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~125°C TJ