STGWA25H120F2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT HB 1200V 25A HS TO247-3
PDF
/
Inventory: 8054
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 700μJ (off)
Td (on/off) @ 25°C 29ns/130ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 100nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 339 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Test Condition 600V, 25A, 10 Ω, 15V
Turn On Time 41 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 375W
Input Type Standard
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number STGWA25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 375W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
Recommended For You
STGWA25H120F2+price,STGWA25H120F2+datasheet,STGWA25H120F2+in stock,buy+STGWA25H120F2,finder+STGWA25H120F2,STGWA25H120F2+tutorials,STGWA25H120F2+download