STGW80H65DFB
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
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Buying Options
Total Price: USD $6.28
Unit Price: USD $6.2832
≥1 USD $6.2832
≥10 USD $5.01395
≥100 USD $4.48617
≥500 USD $3.958416
≥1000 USD $3.562566
≥3000 USD $3.338254
Inventory: 836
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Dimensions
Width 5.15mm
Length 15.75mm
Height 20.15mm
Technical
Gate-Emitter Voltage-Max 20V
Switching Energy 2.1mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C 84ns/280ns
Current - Collector Pulsed (Icm) 240A
Gate Charge 414nC
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A
Test Condition 400V, 80A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 650V
Reverse Recovery Time 85 ns
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Power - Max 469W
Input Type Standard
Element Configuration Single
Base Part Number STGW80
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 469W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Weight 38.000013g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 20 Weeks
Alternative Model
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