STGW45NC60VD
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-247 Tube
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 333μJ (on), 537μJ (off)
Td (on/off) @ 25°C 33ns/178ns
Current - Collector Pulsed (Icm) 220A
Gate Charge 126nC
Turn Off Time-Nom (toff) 366 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Test Condition 390V, 30A, 10 Ω, 15V
Turn On Time 46 ns
Collector Emitter Saturation Voltage 2.4V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 45ns
Max Collector Current 90A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 178 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 33 ns
Input Type Standard
Power Dissipation 270W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGW45
Max Power Dissipation 270W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series PowerMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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