Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 302μJ (on), 349μJ (off)
Td (on/off) @ 25°C 33ns/168ns
Current - Collector Pulsed (Icm) 230A
Turn Off Time-Nom (toff) 280 ns
Continuous Collector Current 40A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 390V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 40A
Reverse Recovery Time 45 ns
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 168 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 650V
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ