Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 302μJ (on), 349μJ (off)
Td (on/off) @ 25°C 33ns/168ns
Current - Collector Pulsed (Icm) 230A
Turn Off Time-Nom (toff) 280 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Test Condition 390V, 30A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 213 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ