Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 283W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 80A
Reverse Recovery Time 62 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.8V
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 40ns/142ns
Switching Energy 498μJ (on), 363μJ (off)
Gate-Emitter Voltage-Max 20V