Gate-Emitter Voltage-Max 20V
Switching Energy 363μJ (off)
Td (on/off) @ 25°C -/142ns
Current - Collector Pulsed (Icm) 160A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Test Condition 400V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 283W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ