Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 424 ns
Collector Emitter Voltage (VCEO) 1.3kV
Max Collector Current 63A
Collector Emitter Breakdown Voltage 1.3kV
Voltage - Collector Emitter Breakdown (Max) 1300V
Collector Emitter Saturation Voltage 2.1V
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 740 ns
Current - Collector Pulsed (Icm) 125A
Td (on/off) @ 25°C -/284ns
Switching Energy 3.4mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5.75V