Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 260W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Test Condition 390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 20A
Turn Off Time-Nom (toff) 197 ns
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 29.5ns/118ns
Switching Energy 305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max 20V
Operating Temperature -55°C~150°C TJ
Gate-Emitter Thr Voltage-Max 5.75V