STGW35NB60S
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors N Ch 35A 600V
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 840μJ (on), 7.4mJ (off)
Td (on/off) @ 25°C 92ns/1.1μs
Current - Collector Pulsed (Icm) 250A
Gate Charge 83nC
Turn Off Time-Nom (toff) 3600 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Test Condition 480V, 20A, 100 Ω, 15V
Turn On Time 153 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection ISOLATED
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number STGW35
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series PowerMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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