STGW35HF60W
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
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Buying Options
Total Price: USD $2.4
Unit Price: USD $2.3959
≥1 USD $2.3959
≥10 USD $1.96555
≥100 USD $1.90475
≥500 USD $1.843
≥1000 USD $1.78125
Inventory: 1631
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 290μJ (on), 185μJ (off)
Td (on/off) @ 25°C 30ns/175ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 140nC
Turn Off Time-Nom (toff) 295 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 400V, 20A, 10 Ω, 15V
Turn On Time 45 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 175 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Turn On Delay Time 30 ns
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGW35
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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