Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 305μJ (on), 181μJ (off)
Td (on/off) @ 25°C 29.5ns/118ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 189 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 390V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 40 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 118 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 29.5 ns
Element Configuration Single
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ