Gate-Emitter Thr Voltage-Max 5.75V
Switching Energy 305μJ (on), 181μJ (off)
Td (on/off) @ 25°C 29.5ns/118ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 189 ns
Drain to Source Resistance 2.5Ohm
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 390V, 20A, 10 Ω, 15V
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 30A
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 118 ns
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Turn On Delay Time 29.5 ns
Element Configuration Single
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ