Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 850μJ (on), 1.3mJ (off)
Td (on/off) @ 25°C 28ns/150ns
Current - Collector Pulsed (Icm) 100A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A
Test Condition 600V, 25A, 15 Ω, 15V
Collector Emitter Saturation Voltage 1.85V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 265 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 375W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ