STGW25H120F2
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors IGBT & Power Bipolar
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Buying Options
Total Price: USD $4.58
Unit Price: USD $4.5848
≥1 USD $4.5848
≥10 USD $3.6608
≥100 USD $3.39211
Inventory: 700
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (on), 700μJ (off)
Td (on/off) @ 25°C 29ns/130ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 100nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 339 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 25A
Test Condition 600V, 25A, 10 Ω, 15V
Turn On Time 41 ns
Collector Emitter Saturation Voltage 2.1V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 375W
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Base Part Number STGW25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 375W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 38.000013g
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 32 Weeks
Alternative Model
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