Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 220μJ (on), 330μJ (off)
Td (on/off) @ 25°C 31ns/100ns
Current - Collector Pulsed (Icm) 100A
Turn Off Time-Nom (toff) 280 ns
Continuous Collector Current 30A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Test Condition 390V, 20A, 3.3 Ω, 15V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 100 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ