Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 32μJ (on), 24μJ (off)
Td (on/off) @ 25°C 6.7ns/46ns
Current - Collector Pulsed (Icm) 18A
Turn Off Time-Nom (toff) 122 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Test Condition 390V, 3A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 23ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 56W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ