STGP35N35LZ
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 345V 40A 176W TO220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 2.3V
Gate-Emitter Voltage-Max 12V
Td (on/off) @ 25°C 1.1μs/26.5μs
Current - Collector Pulsed (Icm) 80A
Gate Charge 49nC
Turn Off Time-Nom (toff) 37000 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 15A
Test Condition 300V, 15A, 5V
Turn On Time 7600 ns
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 345V
JEDEC-95 Code TO-220AB
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 1.7V
Turn-Off Delay Time 26.5 μs
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 176W
Turn On Delay Time 1.1 μs
Input Type Logic
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGP35
Max Power Dissipation 176W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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