STGP19NC60WD
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 40A 125W TO220
PDF
/
Buying Options
Total Price: USD $0.67
Unit Price: USD $0.665
≥1 USD $0.665
≥10 USD $0.5453
≥100 USD $0.52915
≥500 USD $0.51205
≥1000 USD $0.49495
Inventory: 1516
Minimum: 1
-
+
Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Base Part Number STGP19
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 7ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 90 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 31ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 33 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 204 ns
Gate Charge 53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
STGP19NC60WD+price,STGP19NC60WD+datasheet,STGP19NC60WD+in stock,buy+STGP19NC60WD,finder+STGP19NC60WD,STGP19NC60WD+tutorials,STGP19NC60WD+download