Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 85μJ (on), 189μJ (off)
Td (on/off) @ 25°C 25ns/97ns
Current - Collector Pulsed (Icm) 60A
Turn Off Time-Nom (toff) 272 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Test Condition 390V, 12A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.8V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 130W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ