Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 82μJ (on), 155μJ (off)
Td (on/off) @ 25°C 22.5ns/116ns
Current - Collector Pulsed (Icm) 50A
Turn Off Time-Nom (toff) 340 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Test Condition 390V, 7A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 37 ns
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 116 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 22.5 ns
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 80W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ