Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 55μJ (on), 85μJ (off)
Td (on/off) @ 25°C 17ns/72ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 242 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 22 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 65W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ