Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 55μJ (on), 85μJ (off)
Td (on/off) @ 25°C 17ns/72ns
Current - Collector Pulsed (Icm) 30A
Turn Off Time-Nom (toff) 242 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ