Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 77μJ (on), 170μJ (off)
Td (on/off) @ 25°C 30ns/139ns
Current - Collector Pulsed (Icm) 80A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Test Condition 400V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.55V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 52W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ