Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 25W
Element Configuration Single
Turn On Delay Time 1.1 μs
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.2V
Test Condition 480V, 7A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.6V @ 4.5V, 7A
Continuous Collector Current 15A
Turn Off Time-Nom (toff) 8100 ns
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 1.1μs/5.2μs
Switching Energy 4.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 2.4V