STGF3NB60FD
RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 6A 25W TO220FP
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 25W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 245
Current Rating 3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGF3
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection ISOLATED
Input Type Standard
Power - Max 25W
Transistor Application MOTOR CONTROL
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 6A
Reverse Recovery Time 45 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 16.5 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Turn Off Time-Nom (toff) 535 ns
Gate Charge 16nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 12.5ns/105ns
Switching Energy 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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