Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 300μJ (on), 1.28mJ (off)
Td (on/off) @ 25°C 21.5ns/180ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 555 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A
Test Condition 480V, 20A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 260 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 21.5 ns
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 40W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ