Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 25W
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 10A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 5A
Turn Off Time-Nom (toff) 560 ns
Current - Collector Pulsed (Icm) 25A
Td (on/off) @ 25°C 19ns/160ns
Switching Energy 60μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V