Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 46.5μJ (on), 23.5μJ (off)
Td (on/off) @ 25°C 6.7ns/46ns
Current - Collector Pulsed (Icm) 25A
Turn Off Time-Nom (toff) 122 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Test Condition 390V, 3A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 30 ns
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 50W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ