STGDL6NC60DIT4
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 32μJ (on), 24μJ (off)
Td (on/off) @ 25°C 6.7ns/46ns
Current - Collector Pulsed (Icm) 18A
Gate Charge 12nC
Turn Off Time-Nom (toff) 122 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A
Test Condition 390V, 3A, 10 Ω, 15V
Turn On Time 10.5 ns
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 23 ns
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 67 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 50W
Turn On Delay Time 6.7 ns
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGDL6
Terminal Form GULL WING
Max Power Dissipation 50W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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