STGD3NB60SD-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK Tube
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 4.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.1mJ (on), 1.15mJ (off)
Td (on/off) @ 25°C 125μs/3.4μs
Current - Collector Pulsed (Icm) 25A
Gate Charge 18nC
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 3A
Test Condition 480V, 3A, 1k Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 1.7 μs
Max Collector Current 6A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Power - Max 48W
Input Type Standard
Element Configuration Single
Base Part Number STGD3
Max Power Dissipation 48W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tube
Operating Temperature 175°C TJ
Physical
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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