Gate-Emitter Voltage-Max 16V
Td (on/off) @ 25°C 650ns/13.5μs
Current - Collector Pulsed (Icm) 40A
Turn Off Time-Nom (toff) 22200 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Test Condition 300V, 10A, 5V
Max Breakdown Voltage 420V
Collector Emitter Saturation Voltage 1.35V
Collector Emitter Breakdown Voltage 420V
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 360V
Turn-Off Delay Time 13.5 s
Polarity/Channel Type N-CHANNEL
Transistor Application AUTOMOTIVE IGNITION
Turn On Delay Time 650 ms
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 125W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ