Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 60μJ (on), 340μJ (off)
Td (on/off) @ 25°C 19ns/160ns
Current - Collector Pulsed (Icm) 25A
Turn Off Time-Nom (toff) 560 ns
Vce(on) (Max) @ Vge, Ic 1.65V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 18A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ