STGD10NC60KT4
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 20A 60W DPAK
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Buying Options
Total Price: USD $3.02
Unit Price: USD $3.018843
≥1 USD $3.018843
≥10 USD $2.847969
≥100 USD $2.686763
≥500 USD $2.534674
≥1000 USD $2.391204
Inventory: 1384
Minimum: 1
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Technical Details
Technical
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Current - Collector Pulsed (Icm) 30A
Gate Charge 19nC
Turn Off Time-Nom (toff) 242 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Test Condition 390V, 5A, 10 Ω, 15V
Turn On Time 23 ns
Collector Emitter Breakdown Voltage 600V
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 60W
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGD10
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 60W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Weight 350.003213mg
Number of Pins 3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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