Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 45μJ (on), 105μJ (off)
Td (on/off) @ 25°C 9.5ns/87ns
Current - Collector Pulsed (Icm) 30A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 5A
Test Condition 400V, 5A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 50 ns
Max Collector Current 18A
Collector Emitter Voltage (VCEO) 2.75V
Polarity/Channel Type N-CHANNEL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 62.5W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101
Operating Temperature -55°C~150°C TJ