Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 95μJ (on), 115μJ (off)
Td (on/off) @ 25°C 18.5ns/72ns
Current - Collector Pulsed (Icm) 50A
Turn Off Time-Nom (toff) 221 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Test Condition 390V, 7A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 37 ns
Max Collector Current 25A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 72 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 18.5 ns
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 80W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ