Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 140μJ (off)
Td (on/off) @ 25°C 15ns/50ns
Current - Collector Pulsed (Icm) 56A
Turn Off Time-Nom (toff) 202 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 7A
Test Condition 480V, 7A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.8V
Collector Emitter Breakdown Voltage 600V
Continuous Drain Current (ID) 7A
Reverse Recovery Time 50 ns
Max Collector Current 14A
Collector Emitter Voltage (VCEO) 2.8V
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 600V
Transistor Application POWER CONTROL
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 80W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ