Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 20μJ (on), 68μJ (off)
Td (on/off) @ 25°C 12ns/76ns
Current - Collector Pulsed (Icm) 21A
Turn Off Time-Nom (toff) 222 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Test Condition 390V, 3A, 10 Ω, 15V
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.7V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 56W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ