Gate-Emitter Thr Voltage-Max 5.75V
Gate-Emitter Voltage-Max 20V
Switching Energy 20μJ (on), 68μJ (off)
Td (on/off) @ 25°C 12ns/76ns
Current - Collector Pulsed (Icm) 21A
Turn Off Time-Nom (toff) 222 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Test Condition 390V, 3A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 21 ns
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Single
Max Power Dissipation 56W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ