STGB3NB60FDT4
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 6A 68W D2PAK
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 125μJ (off)
Td (on/off) @ 25°C 12.5ns/105ns
Current - Collector Pulsed (Icm) 24A
Gate Charge 16nC
Turn Off Time-Nom (toff) 535 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 3A
Test Condition 480V, 3A, 10 Ω, 15V
Turn On Time 16.5 ns
Max Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 45ns
Max Collector Current 6A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Rise Time 60ns
Transistor Application MOTOR CONTROL
Input Type Standard
Power Dissipation 68W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Base Part Number STGB3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 3A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 68W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN LEAD
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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