STGB35N35LZT4
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 380V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $1.61
Unit Price: USD $1.60645
≥1 USD $1.60645
≥10 USD $1.3186
≥100 USD $1.27775
≥500 USD $1.23595
≥1000 USD $1.1951
Inventory: 17656
Minimum: 1
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Technical Details
Technical
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 380V
Turn-Off Delay Time 28 μs
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 1.1 μs
Input Type Logic
Case Connection COLLECTOR
Power Dissipation 176W
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PDSO-G2
Pin Count 3
Base Part Number STGB35
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 176W
Subcategory Insulated Gate BIP Transistors
Additional Feature VOLTAGE CLAMPING
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series PowerMESH?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Gate-Emitter Voltage-Max 12V
Td (on/off) @ 25°C 1.1μs/26.5μs
Current - Collector Pulsed (Icm) 80A
Gate Charge 49nC
Turn Off Time-Nom (toff) 37000 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 15A
Test Condition 300V, 15A, 5V
Turn On Time 7600 ns
Max Breakdown Voltage 345V
Collector Emitter Saturation Voltage 1.15V
Collector Emitter Breakdown Voltage 345V
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
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